Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing

doi:10.1007/s11431-012-5064-6

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	Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing
	Yang AiLing 1; Yang Yun 1; Zhang ZhenZhen 1; Bao XiChang 2; Yang RenQiang 2; Li ShunPin 1; Sun Liang 2
	2013
发表期刊	SCIENCE CHINA-TECHNOLOGICAL SCIENCES
卷号	56 期号:1 页码:25-31
摘要	Nano-ZnO thin films composed of nanoparticles with sizes of 10-16 nm on silicon substrates at low temperature were prepared by sol-gel method. By placing the nano-ZnO thin films at room temperature or annealing at 100 degrees C in air for 10 h intermittently, within a total 70 h annealing time, the evolution of PL spectra of the nano-ZnO thin films were studied in detail. As the annealing time increases, the PL peaks shift from violet to blue and green bands. The PL peaks at violet and blue bands decrease with the annealing time, but the PL peaks at green band are opposite. The PL spectra are related to the defects in the nano-ZnO thin films. The PL peaks positioned at 430 nm are mainly related to defects of zinc interstatials (Zn-i), oxygen vacancies and (V-o); the ones at 420 nm to oxygen interstitials (O-i), Zinc vacancies (V-zn), Zn-i; and the ones at 468 nm to V-zn, Zn-i, and charged oxygen interstatials(V-o(+)). The green luminescence is related to O-i, V-o and Zn-i. The evolutions of PL spectra and the defects are also related to the concentrations of Zn in the thin films, the thicknesses of the films and the annealing time. For the films with 0.5 M and 1.0 M Zn concentrations, after 20 h and 30 h annealing in air at 100 degrees C, respectively, either placing them in air at room temperature or continuing anneal in air at 100 degrees C, the PL spectra are stable. Under the low temperature annealing, Zn-i decreases with the annealing time, and O-i increases. Sufficient O-i favors to keep the nano-ZnO thin films stable. This result is important to nano-ZnO thin films as electron transport layers in inverted or tandem organic solar cells.
文章类型	Article
关键词	Nano-zno Thin Films Low Temperature Annealing Pl Spectra Defects
WOS标题词	Science & Technology ; Technology
DOI	10.1007/s11431-012-5064-6
关键词[WOS]	SENSITIZED SOLAR-CELLS ; CHEMICAL-VAPOR-DEPOSITION ; OPTICAL-PROPERTIES ; LUMINESCENT PROPERTIES ; HYDROTHERMAL METHOD ; FIELD-EMISSION ; GROWTH ; SENSORS ; FABRICATION ; NANOFLOWERS
收录类别	SCI
语种	英语
WOS研究方向	Engineering ; Materials Science
WOS类目	Engineering, Multidisciplinary ; Materials Science, Multidisciplinary
WOS记录号	WOS:000314375300005
引用统计
文献类型	期刊论文
条目标识符	http://ir.qibebt.ac.cn/handle/337004/6030
专题	先进有机功能材料研究组
作者单位	1.Ocean Univ China, Dept Phys, Qingdao 266100, Peoples R China 2.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Peoples R China
推荐引用方式 GB/T 7714	Yang AiLing,Yang Yun,Zhang ZhenZhen,et al. Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing[J]. SCIENCE CHINA-TECHNOLOGICAL SCIENCES,2013,56(1):25-31.
APA	Yang AiLing.,Yang Yun.,Zhang ZhenZhen.,Bao XiChang.,Yang RenQiang.,...&Sun Liang.(2013).Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing.SCIENCE CHINA-TECHNOLOGICAL SCIENCES,56(1),25-31.
MLA	Yang AiLing,et al."Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing".SCIENCE CHINA-TECHNOLOGICAL SCIENCES 56.1(2013):25-31.