Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid

doi:10.1088/2053-1583/aacba5

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	Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid
	Zhang, Mingjia 1; Wang, Xiaoxiong 2; Sun, Huijuan 2; Yu, Jiaojiao 1; Wang, Ning 1; Long, Yunze 2; Huang, Changshui 1
	2018-07-01
发表期刊	2D MATERIALS
ISSN	2053-1583
卷号	5 期号:3 页码:8
摘要	The 2D graphdiyne has attracted much attention in spin-dependent physical properties recently due to its superior intrinsic semiconductor properties and greater paramagnetic moment compared with graphene. However, to date, no ferromagnetic ordering has been successfully induced into graphdiyne (GDY), which restricts its further application in electronics involving spin. Herein, we for the first time obtain the ferromagnetic graphdiyne based on transition metal ferrum (Fe) doping through a simple and affordable synthetic route. In particular, by means of chemical reduction with heat-treatment in the special carbon matrix of graphdiyne, a typical ferromagnetic curve with T-c above room temperature is observed in Fe/GDY hybrid, which can be attributed to the presence of low valence Fe ions. After annealing, the remanent magnetization of Fe/GDY increases and the coercive field reduces by an order of magnitude compared with the raw Fe/GDY hybrid even at 300 K, establishing the robust room temperature ferromagnetic characteristics. Subsequent spin-polarized DFT calculation further supports our conclusion that the observed ferromagnetism originates from the remarkable local magnetic moment as well as the electron transfer between carbon atoms and ferric ions. The coexistence of ferromagnetism and semiconductivity can not only promote exploration of new physical property of GDY but also develop spintronic devices based on carbon materials.
关键词	graphdiyne ferromagnetism local magnetic moment transition metal doping ferromagnetic semiconductor
DOI	10.1088/2053-1583/aacba5
关键词[WOS]	THEORETICAL PREDICTIONS ; GRAPHENE ; SPINTRONICS ; GRAPHYNE ; SHEET ; XPS
语种	英语
资助项目	National Natural Science Foundation of China[21790050] ; National Natural Science Foundation of China[21790051] ; National Natural Science Foundation of China[21771187] ; National Natural Science Foundation of China[51673103] ; Hundred Talents Program and Frontier Science Research Project of the Chinese Academy of Sciences[QYZDB-SSW-JSC052] ; Shandong Provincial Natural Science Foundation, China[ZR2016EMB18] ; Natural Science Foundation of Shandong Province (China) for Distinguished Young Scholars[JQ201610]
WOS研究方向	Materials Science
项目资助者	National Natural Science Foundation of China ; Hundred Talents Program and Frontier Science Research Project of the Chinese Academy of Sciences ; Shandong Provincial Natural Science Foundation, China ; Natural Science Foundation of Shandong Province (China) for Distinguished Young Scholars
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:000436006300001
出版者	IOP PUBLISHING LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.qibebt.ac.cn/handle/337004/12493
专题	中国科学院青岛生物能源与过程研究所
通讯作者	Long, Yunze
作者单位	1.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Peoples R China 2.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Mingjia,Wang, Xiaoxiong,Sun, Huijuan,et al. Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid[J]. 2D MATERIALS,2018,5(3):8.
APA	Zhang, Mingjia.,Wang, Xiaoxiong.,Sun, Huijuan.,Yu, Jiaojiao.,Wang, Ning.,...&Huang, Changshui.(2018).Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid.2D MATERIALS,5(3),8.
MLA	Zhang, Mingjia,et al."Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid".2D MATERIALS 5.3(2018):8.