QIBEBT-IR
Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid
Zhang, Mingjia1; Wang, Xiaoxiong2; Sun, Huijuan2; Yu, Jiaojiao1; Wang, Ning1; Long, Yunze2; Huang, Changshui1
2018-07-01
Source Publication2D MATERIALS
ISSN2053-1583
Volume5Issue:3Pages:8
AbstractThe 2D graphdiyne has attracted much attention in spin-dependent physical properties recently due to its superior intrinsic semiconductor properties and greater paramagnetic moment compared with graphene. However, to date, no ferromagnetic ordering has been successfully induced into graphdiyne (GDY), which restricts its further application in electronics involving spin. Herein, we for the first time obtain the ferromagnetic graphdiyne based on transition metal ferrum (Fe) doping through a simple and affordable synthetic route. In particular, by means of chemical reduction with heat-treatment in the special carbon matrix of graphdiyne, a typical ferromagnetic curve with T-c above room temperature is observed in Fe/GDY hybrid, which can be attributed to the presence of low valence Fe ions. After annealing, the remanent magnetization of Fe/GDY increases and the coercive field reduces by an order of magnitude compared with the raw Fe/GDY hybrid even at 300 K, establishing the robust room temperature ferromagnetic characteristics. Subsequent spin-polarized DFT calculation further supports our conclusion that the observed ferromagnetism originates from the remarkable local magnetic moment as well as the electron transfer between carbon atoms and ferric ions. The coexistence of ferromagnetism and semiconductivity can not only promote exploration of new physical property of GDY but also develop spintronic devices based on carbon materials.
Keywordgraphdiyne ferromagnetism local magnetic moment transition metal doping ferromagnetic semiconductor
DOI10.1088/2053-1583/aacba5
WOS KeywordTHEORETICAL PREDICTIONS ; GRAPHENE ; SPINTRONICS ; GRAPHYNE ; SHEET ; XPS
Language英语
Funding ProjectNational Natural Science Foundation of China[21790050] ; National Natural Science Foundation of China[21790051] ; National Natural Science Foundation of China[21771187] ; National Natural Science Foundation of China[51673103] ; Hundred Talents Program and Frontier Science Research Project of the Chinese Academy of Sciences[QYZDB-SSW-JSC052] ; Shandong Provincial Natural Science Foundation, China[ZR2016EMB18] ; Natural Science Foundation of Shandong Province (China) for Distinguished Young Scholars[JQ201610]
WOS Research AreaMaterials Science
Funding OrganizationNational Natural Science Foundation of China ; Hundred Talents Program and Frontier Science Research Project of the Chinese Academy of Sciences ; Shandong Provincial Natural Science Foundation, China ; Natural Science Foundation of Shandong Province (China) for Distinguished Young Scholars
WOS SubjectMaterials Science, Multidisciplinary
WOS IDWOS:000436006300001
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.qibebt.ac.cn/handle/337004/12493
Collection中国科学院青岛生物能源与过程研究所
Corresponding AuthorLong, Yunze
Affiliation1.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Peoples R China
2.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Mingjia,Wang, Xiaoxiong,Sun, Huijuan,et al. Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid[J]. 2D MATERIALS,2018,5(3):8.
APA Zhang, Mingjia.,Wang, Xiaoxiong.,Sun, Huijuan.,Yu, Jiaojiao.,Wang, Ning.,...&Huang, Changshui.(2018).Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid.2D MATERIALS,5(3),8.
MLA Zhang, Mingjia,et al."Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid".2D MATERIALS 5.3(2018):8.
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