QIBEBT-IR  > 先进有机功能材料研究组
Novel high band gap pendant-borylated carbazole polymers with deep HOMO levels through direct N+=B- interaction for organic photovoltaics
Brandt, Rasmus G.1,2; Sveegaard, Steffen G.1,3,4,5; Xiao, Manjun6; Yue, Wei1,2; Du, Zhengkun1,2; Qiu, Meng6; Angmo, Dechan7; Andersen, Thomas R.7,8; Krebs, Frederik C.7; Yang, Renqiang6; Yu, Donghong1,2
2016
发表期刊JOURNAL OF MATERIALS CHEMISTRY C
卷号4期号:20页码:4393-4401
摘要In this communication, we investigate the direct and still conjugated intramolecular N+=B- interactions in novel high band gap borylated carbazole containing polymers, namely, poly(3,6-(N-di(2,4,6-trimethyl)-phenylboryl-carbazole)-alt- 4,8-di(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b: 4,5-b'] dithiophene) (P(3,6-BCBDT)) and poly(3,6-(N-di(2,4,6-trimethyl)phenylboryl-carbazole)-alt-3,3 '''- didodecyl-2,2': 5',2 '': 5 '',2 '''-quaterthiophene) (P(3,6-BCQT)), which result in ambipolarity, high electron affinity, and deep HOMO levels. The quasi-donor-acceptor nature of the two polymers was confirmed by UV-Vis absorption, electro-chemical property studies, and computer modelling. Band gaps of 2.07 eV for P(3,6-BCBDT) and 2.23 eV for P(3,6-BCQT) were obtained. P(3,6-BCQT) afforded a power conversion efficiency of 1.44%, with a J(sc) of 4.82 mA cm(-2), a V-oc of 0.79 V and a FF of 37%, and P(3,6-BCBDT) performed better with an efficiency of 3.82%, with a J(sc) of 8.31 mA cm(-2), a V-oc of 1.0 V based on its low lying HOMO level, and a FF of 45%.
文章类型Article
WOS标题词Science & Technology ; Technology ; Physical Sciences
DOI10.1039/c6tc01208f
关键词[WOS]OPEN-CIRCUIT VOLTAGE ; SOLAR-CELLS ; CONJUGATED POLYMERS ; ORGANOBORON COMPOUNDS ; OPTICAL-PROPERTIES ; BUILDING-BLOCK ; LEWIS-ACIDS ; ACCEPTOR ; EFFICIENT ; MOIETIES
收录类别SCI
语种英语
WOS研究方向Materials Science ; Physics
项目资助者Innovation Fund Denmark (IFD) through the WAPART project(0603-00493B ; Danish National Research Foundation (DNRF) for the Danish-Chinese Cente ; National Natural Science Foundation of China(21274161 ; Sino-Danish Center for Education and Research (SDC) ; 11-116380) ; 51173199 ; 51573205)
WOS类目Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000377141300005
引用统计
文献类型期刊论文
条目标识符http://ir.qibebt.ac.cn/handle/337004/8228
专题先进有机功能材料研究组
作者单位1.Aalborg Univ, Dept Chem & Biosci, Fredrik Bajers Vej 7H, DK-9220 Aalborg, Denmark
2.Sino Danish Ctr Educ & Res SDC, Niels Jensens Vej 2, DK-8000 Aarhus, Denmark
3.Aarhus Univ, Danish Natl Res Fdn, Ctr DNA Nanotechnol, Dept Chem, Gustav Wieds Vej 14, DK-8000 Aarhus C, Denmark
4.Aarhus Univ, iNANO, Gustav Wieds Vej 14, DK-8000 Aarhus C, Denmark
5.Unisense Environm AS, Tueager 1, DK-8200 Aarhus N, Denmark
6.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, CAS Key Lab Biobased Mat, Qingdao 266101, Peoples R China
7.Tech Univ Denmark, Dept Energy Convers & Storage, Frederiksborgvej 399, DK-4000 Roskilde, Denmark
8.Univ Newcastle, Ctr Organ Elect, Univ Dr, Callaghan, NSW 2308, Australia
推荐引用方式
GB/T 7714
Brandt, Rasmus G.,Sveegaard, Steffen G.,Xiao, Manjun,et al. Novel high band gap pendant-borylated carbazole polymers with deep HOMO levels through direct N+=B- interaction for organic photovoltaics[J]. JOURNAL OF MATERIALS CHEMISTRY C,2016,4(20):4393-4401.
APA Brandt, Rasmus G..,Sveegaard, Steffen G..,Xiao, Manjun.,Yue, Wei.,Du, Zhengkun.,...&Yu, Donghong.(2016).Novel high band gap pendant-borylated carbazole polymers with deep HOMO levels through direct N+=B- interaction for organic photovoltaics.JOURNAL OF MATERIALS CHEMISTRY C,4(20),4393-4401.
MLA Brandt, Rasmus G.,et al."Novel high band gap pendant-borylated carbazole polymers with deep HOMO levels through direct N+=B- interaction for organic photovoltaics".JOURNAL OF MATERIALS CHEMISTRY C 4.20(2016):4393-4401.
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Brandt, Rasmus G.]的文章
[Sveegaard, Steffen G.]的文章
[Xiao, Manjun]的文章
百度学术
百度学术中相似的文章
[Brandt, Rasmus G.]的文章
[Sveegaard, Steffen G.]的文章
[Xiao, Manjun]的文章
必应学术
必应学术中相似的文章
[Brandt, Rasmus G.]的文章
[Sveegaard, Steffen G.]的文章
[Xiao, Manjun]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。