| Local Probe Oxidation of Self-Assembled Monolayers on Hydrogen-Terminated Silicon | |
Yang, Menglong2,3 ; Wouters, Daan1,4; Giesbers, Marcel2; Schubert, Ulrich S.1,5; Zuilhof, Han2
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| 2009-10-01 | |
| 发表期刊 | ACS NANO
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| 卷号 | 3期号:10页码:2887-2900 |
| 摘要 | Local probe oxidation experiments by conductive AFM have been performed on a hexadecyl monolayer and a N-hydroxysuccinimide (NHS)-ester-functionalized undecyl (NHS-UA) monolayer assembled on hydrogen-terminated (i.e., unoxidized) silicon. The oxidation conditions for the mild oxidation of the top terminal groups of monolayers and the deep oxidation of the underlying silicon into silicon oxide were investigated. The results show that the bias threshold for the AFM tip-induced oxidation of the top groups of monolayers on oxide-free silicon can be reduced by 2 V for the methyl-terminated hexadecyl monolayer and even by 3.5 V for the active NHS-ester-terminated undecyl monolayer, in comparison to a methyl-terminated octadecyl trichlorosilane (OTS) monolayer on oxidized silicon. Upon such localmild oxidation, the active NHS ester group of the NHS-UAmonolayer is selectively cleaved off to generate carboxyl-containing monolayer nanopatterns, opening further possibilities for subsequent patterned multifunctionalization.; Local probe oxidation experiments by conductive AFM have been performed on a hexadecyl monolayer and N-hydroxysuccinimide (NHS)-ester-functionalized undecyl (NHS-UA) monolayer assembled on hydrogen-terminated (i.e., unoxidized) silicon. The oxidation conditions for the mild oxidation of the top terminal groups of monolayers and the deep oxidation of the underlying silicon into silicon oxide were investigated. The results show that the bias threshold for the AFM tip-induced oxidation of the top groups of monolayers on oxide-free silicon can be reduced by 2 V for the methyl-terminated hexadecyl monolayer and even by 3.5 V for the active NHS-ester-terminated undecyl monolayer, in comparison to a methyl-terminated octadecyl trichlorosilane (OTS) monolayer on oxidized silicon. Upon such local mild oxidation, the active NHS ester group of the NHS-UA monolayer is selectively cleaved off to generate carboxyl-containing monolayer nanopatterns, opening further possibilities for subsequent patterned multifunctionalization. |
| 文章类型 | Article |
| 关键词 | Local Probe Oxidation Nanolithography Nanopatterning Self-assembled Monolayer (Sam) Hydrogen-terminated Silicon N-hydroxysuccinimide (Nhs) Xps Analysis |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| DOI | 10.1021/nn9007059 |
| 关键词[WOS] | ATOMIC-FORCE MICROSCOPY ; COVALENTLY ATTACHED MONOLAYERS ; LINKED ORGANIC MONOLAYERS ; EXTREMELY MILD ATTACHMENT ; FIELD-INDUCED OXIDATION ; ALKYL MONOLAYERS ; CONSTRUCTIVE NANOLITHOGRAPHY ; ANODIZATION LITHOGRAPHY ; CHEMICAL-MODIFICATION ; MOLECULAR SIMULATION |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000271106100006 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.qibebt.ac.cn/handle/337004/602 |
| 专题 | 公共实验室 |
| 作者单位 | 1.Eindhoven Univ Technol, Lab Macromol Chem & Nanosci, NL-5600 MB Eindhoven, Netherlands 2.Wageningen Univ, Organ Chem Lab, NL-6703 HB Wageningen, Netherlands 3.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Peoples R China 4.Dutch Polymer Inst, NL-5600 MB Eindhoven, Netherlands 5.Univ Jena, Lab Organ & Macromol Chem, D-07743 Jena, Germany |
| 推荐引用方式 GB/T 7714 | Yang, Menglong,Wouters, Daan,Giesbers, Marcel,et al. Local Probe Oxidation of Self-Assembled Monolayers on Hydrogen-Terminated Silicon[J]. ACS NANO,2009,3(10):2887-2900. |
| APA | Yang, Menglong,Wouters, Daan,Giesbers, Marcel,Schubert, Ulrich S.,&Zuilhof, Han.(2009).Local Probe Oxidation of Self-Assembled Monolayers on Hydrogen-Terminated Silicon.ACS NANO,3(10),2887-2900. |
| MLA | Yang, Menglong,et al."Local Probe Oxidation of Self-Assembled Monolayers on Hydrogen-Terminated Silicon".ACS NANO 3.10(2009):2887-2900. |
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