| Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector | |
Bao, Xichang1,2 ; Xu, Jintong2; Li, Chao2; Qiao, Hui2; Zhang, Yan2; Li, Xiangyang2
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| 2013-12-25 | |
| 发表期刊 | JOURNAL OF ALLOYS AND COMPOUNDS
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| 卷号 | 581期号:2013页码:289-292 |
| 摘要 | In this work, back-illuminated planar GaN-based p-i-n photodetectors were fabricated by Si implantation into GaN-based p-i-n structure grown by metal-organic chemical vapor deposition (MOCVD). The dark current density of the photodetector is 1.03 nA/cm(2) under zero bias. The unbiased responsivity is 0.122 A/W at 360 nm, corresponding to an external quantum efficiency of 42%. Temperature and frequency dependence of capacitance versus voltage characteristics of the photodetectors are also investigated respectively. A novel negative differential capacitance (NDC) effect observed in the photodetector at room temperature under the frequency of 120 kHz or at low temperature under relative high frequency (such as 200 kHz). The NDC effect becomes much more obvious with the temperature or frequency decreased. This novel phenomenon is mainly due to the carrier confinement of the deep level centers in the detector, which mainly include lattice defects formed by high dose ion implantation and subsequent annealing. (c) 2013 Elsevier B.V. All rights reserved. |
| 文章类型 | Article |
| 关键词 | Photodetector Gan Ion implantatIon Negative Differential Capacitance Deep Level Centers |
| 学科领域 | 先进功能有机材料 |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| DOI | 10.1016/j.jallcom.2013.07.098 |
| 关键词[WOS] | ULTRAVIOLET PHOTODETECTORS ; IMPLANTATION ; PHOTODIODES ; DETECTORS ; NITRIDE |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS记录号 | WOS:000324823000048 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.qibebt.ac.cn/handle/337004/1697 |
| 专题 | 先进有机功能材料研究组 |
| 作者单位 | 1.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Bao, Xichang,Xu, Jintong,Li, Chao,et al. Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2013,581(2013):289-292. |
| APA | Bao, Xichang,Xu, Jintong,Li, Chao,Qiao, Hui,Zhang, Yan,&Li, Xiangyang.(2013).Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector.JOURNAL OF ALLOYS AND COMPOUNDS,581(2013),289-292. |
| MLA | Bao, Xichang,et al."Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector".JOURNAL OF ALLOYS AND COMPOUNDS 581.2013(2013):289-292. |
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